Improved Measurement Accuracy for Junction-to-Case Thermal Resistance of GaN HEMT Packages by Gate-to-Gate Electrical Resistance and Stacking Thermal Interface Materials

Thermal Stress Resistance to Fracture and its Relation to with Resistance to Thermal Fatigue and Shock

Dense Silicon nitride was investigated to determine the effect of its microstructural parameters and densification on thermo-mechanical properties and thermal stress resistance to fracture initiation during a hot or cold mechanical and thermal shock testing. The different materials and microstructures were obtained by changing the parameters such as the type of the powder, additive, forming p...

Thermal Stress Resistance to Fracture and its Relation to with Resistance to Thermal Fatigue and Shock

Dense Silicon nitride was investigated to determine the effect of its microstructural parameters and densification on thermo-mechanical properties and thermal stress resistance to fracture initiation during a hot or cold mechanical and thermal shock testing. The different materials and microstructures were obtained by changing the parameters such as the type of the powder, additive, forming p...

Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs

Novel Resistance Measurement Method: Analysis of Accuracy and Thermal Dependence with Applications in Fiber Materials

Material resistance is important since different physicochemical properties can be extracted from it. This work describes a novel resistance measurement method valid for a wide range of resistance values up to 100 GΩ at a low powered, small sized, digitally controlled and wireless communicated device. The analog and digital circuits of the design are described, analysing the main error sources ...

THE IMPACT OF GaN/SUBSTRATE THERMAL BOUNDARY RESISTANCE ON A HEMT DEVICE

The present work uses finite element thermal simulations of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the junction temperature. In particular the effects of substrate thickness, substrate thermal conductivity, GaN thickness, and GaN-to-substrate thermal boundary resistance (TBR) on device temperature rise are quantified....